Surface/Interface Engineering of Semiconductors for Device Application

"Often, it may be said that the interface is the device"

----Herbert Kroemer (2000 Nobel Prize for Physics)

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Year 2011
1. Y.N. Hou, Z.X. Mei, H.L. Liang, D.Q. Ye, S. Liang, C.Z. Gu and X.L. Du: Comparative study of n-MgZnO/p-Si ultraviolet-B photodetector performance with different device structures, Appl. Phys. Lett. (2011) 98, 263501.
2. H.L. Liang, Z.X. Mei, Q.H. Zhang, L. Gu, S. Liang, Y.N. Hou, D.Q. Ye, C.Z. Gu, R.C. Yu and X.L. Du: Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors, Appl. Phys. Lett. (2011) 98, 221902.
3. Y P Liu, Y Guo, J Q Li, M Trunk, A Yu Kuznetsov, J B Xu, Z X Mei and X L Du: Temperature dependence of surface plasmon mediated near band-edge emission from Ag/ZnO nanorods, J. Opt. (2011) 13, 075003.
4. Liu Yao-Ping, Ying Min-Ju, Mei Zeng-Xia, Li Jun-Qiang, Du Xiao-Long and A. Yu. Kuznetsov: Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films, Chin. Phys. B (2011) 20, 066104.
5. Y.N. Hou, Z.X. Mei, Z.L. Liu, T.C. Zhang, X.L. Du: Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain, Appl. Phys. Lett. (2011) 98, 103506.
6. T.C. Zhang, Z.X. Mei, A.Yu. Kuznetsov, X.L. Du: Realization of non-polar ZnO (1 1 -2 0) homoepitaxial films with atomically smooth surface by molecular beam epitaxy, Journal of Crystal Growth, (2011) 325, 93–95

Year 2010
1. A.Yu. Azarov, B.G. Svensson, A. Hallén, X.L. Du and A.Yu. Kuznetsov: Effect of composition on damage accumulation in ternary ZnO-based oxides implanted with heavy ions, J. Appl. Phys. (2010) 108, 033509.
2. Z.L. Liu, Z.X. Mei, R. Wang, J.M. Zhao, H.L. Liang, Y. Guo, A.Yu. Kuznetsov and X.L. Du: Alloy-fluctuation-induced exciton localization in high-Mg-content (0.27≤x≤0.55) wurtzite MgxZn1-xO epilayers, J. Phys. D: Appl. Phys. (2010) 43, 285402.
3. GUO Yang, LIU Yao-Ping, LI Jun-Qiang, ZHANG Sheng-Li,MEI Zeng-Xia, DU Xiao-Long: Van der Pauw Hall measurement on intended doped ZnO films for p-type conductivity, CHIN. PHYS. LETT. (2010) 27, 067203.
4. Zhaoquan Zeng, Yuzi Liu, Hongtao Yuan, Zengxia Mei, Xiaolong Du, Jinfeng Jia, Qikun Xue, Ze Zhang and Gregory J Salamo: Controlled growth of Zn-polar ZnO film on MgAl2O4(1 1 1) substrate using MgO buffer layer, J. Phys. D: Appl. Phys. (2010) 43, 085301.
5. H.T. Yuan, Y.Z.Liu, Z.X.Mei, Z.Q.Zeng, Y.Guo, X.L.Du, J.F.Jia, Z.Zhang, Q.K.Xue: Metastable rocksalt ZnO interfacial layer and its influence on polarity selection of Zn-polar ZnO films, Journal of Crystal Growth (2010) 312, 263–266.

Year 2009
1. Xiaolong Du, Zengxia Mei, Zhanglong Liu,Yang Guo, Tianchong Zhang, Yaonan Hou, Ze Zhang, Qikun Xue, and Andrej Yu Kuznestov: Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors, Advanced Materials (2009) 21, 4625.
2. Pekka T. Neuvonen, Lasse Vines, Andrej Yu. Kuznetsov, Bengt G. Svensson, Xiaolong Du, Filip Tuomisto, and Anders Hallén: Interaction between Na and Li in ZnO, Appl. Phys. Lett. (2009) 95, 242111.
3. Z.L. Liu, Z.X.Mei, T.C.Zhang, Y.P.Liu, Y.Guo, X.L.Du, A.Hallen, J.J.Zhu, A.Yu.Kuznetsov: Solar-blind4.55eVbandgapMg0.55Zn0.45O componentsfabricatedusing quasi-homobuffers, Journal of Crystal Growth (2009) 311, 4356.
4. T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu and X. L. Du: Visible-Blind Ultraviolet Photodetector Based on Double Heterojunction of n-ZnO/insulator-MgO/p-Si, Appl. Phys. Lett. (2009) 94, 113508-113510.
5. T. C. Zhang, Z. X. Mei, Y. Guo, Q. K. Xue and X. L. Du: Influence of growth temperature on formation of continuous Ag thin film on ZnO surface by ultra-high vacuum deposition, J. Phys.:D (2009) 42, 065303-065307.
6. D. Lagarde, A. Balocchi, P. Renucci, H. Carrère, T. Amand, X. Marie, Z. X. Mei, X. L. Du: Hole spin quantum beats in bulk ZnO, Phys. Rev. B (2009) 79, 045204-045209.
7. H. T. Yuan, Y. Z. Liu, Z. Q. Zeng, Z. X. Mei, Y. Guo, X. L. Du, P. Zhang, J. F. Jia, Z. Zhang and Q. K. Xue. Formation of metastable MgO structures on type-III oxide surfaces: effect of periodic out-of-plane electric dipole moment of substrates, J. Crystal Growth (2009) 311, 425-428.
8. Ying Min-Ju, Zhang Ping, and Du Xiao-Long: First-principle study of Mg adsorption on Si(111) surfaces, Chinese Physics B (2009) 18, 0275.
9. X. N. Wang, Y. Wang, J. Zou, T. C. Zhang, Z. X. Mei, Y. Guo, Q. K. Xue, X. L. Du, X. N. Zhang, X. D. Han, and Z. Zhang: Thermal stability of Mg2Si epitaxial film formed on Si(111) substrate by solid phase reaction, Chinese Physics B (2009) 18, 0000.
10. 崔秀芝 张天冲 梅增霞 刘章龙 刘尧平 郭阳 苏希玉 薛其坤 杜小龙: 湿法刻蚀对Si基片孔点阵及ZnO外延薄膜周期形貌的影响, 物理学报 (2009) 58, 309-314.

Year 2008
1. Ding Lan, Yuren Wang, Xiaolong Du, Zengxia Mei, Qikun Xue, Ke Wang, Xiaodong Han, and Ze Zhang: Large Scale Fabrication of Periodical Bowl-like Micropatterns of Single Crystal ZnO,Crystal Growth & Design (2008) 8, 2912-2916.
2. Lagarde, A. Balocchi, P. Renucci, H. Carrère, F. Zhao, T. Amand, X. Marie, Z. X. Mei, X. L. Du, and Q. K. Xue: Exciton and hole spin dynamics in ZnO investigated by time-resolved photoluminescence experiments, Phys. Rev. B (2008) 78, 033203-033207.
3. X. Z. Cui, T. C. Zhang, Z. X. Mei*, Z. L. Liu, Y. P. Liu, Y. Guo, Q. K. Xue and X. L. Du: Growth of single crystalline ZnO film with two-dimensional periodic structure on Si (111) substrate by molecular beam epitaxy, J. Crystal Growth (2008) 310, 5428-5431.

Year 2007
1. X. N. Wang, Y. Wang, Z. X. Mei, J. Dong, Z. Q. Zeng, H. T. Yuan,T. C. Zhang, X. L. Du, J. F. Jia, Q. K. Xue, X. N. Zhang, Z. Zhang, Z. F. Li and W. Lu: Low-temperature engineering for high-quality epitaxy of ZnO film on Si(111) substrate, Appl. Phys. Lett. 90, 151912 (2007).
2. Z. Q. Zeng, Y. Z. Liu, X. L. Du, H. T. Yuan, Z. X. Mei, J. F. Jia, Q. K. Xue, and Z. Zhang: Surface modification of MgAl2O4 (111) for growth of high-quality ZnO epitaxial films, Appl. Phys. Lett. 90, 081911 (2007)
3. H.D. Li, X.N. Zhang, Z.X. Mei, X.L. Du, Q.K. Xue, Z. Zhang:Epitaxial growth of CaO films on MgO(001) surface: strain relaxation at the CaO/MgO heterointerface, J. Appl. Phys. 102, 046103 (2007)
4. Y. Wang, X. N. Wang, Z. X. Mei, X. L. Du, J. Zou, J. F. Jia, Q. K. Xue, X. N. Zhang, Z. Zhang: Epitaxial orientation of Mg2Si(110) thin film on Si(111) substrate, J. Appl. Phys. 102, 126102 (2007)
5. H.D. Li, X.N. Zhang, Z. Zhang, Z.X. Mei, X.L. Du, Q.K. Xue: Structure stability of epitaxial MgO-CaO solid-solution films: effect of diffusion, J. Appl. Phys. 101, 106102 (2007).
6. S.J. Young, L.W. Ji, T.H. Fang, S.J. Chang, Y.K. Su, X.L. Du: ZnO ultraviolet photodiodes with Pd contact electrodes, Acta Materialia 55, 329(2007).
7. Z. X. Mei, X. L. Du, Y. Wang, M. J. Ying, Z. Q. Zeng, H. T. Yuan, J. F. Jia, and Q. K. Xue: Tri-buffer process: a new approach to obtain high-quality ZnO epitaxial films on sapphire substrates, J. Electron. Mater., 36, 452(2007)
8. H. Zheng, X. L. Du, Q. Luo, J. F. Jia, C. Z. Gu, and Q. K. Xue: Wet chemical etching of ZnO film by aqueous acidic salt, Thin Solid Films 515, 3967–3970 (2007).
9. S.J. Young , L.W. Ji , S.J. Chang, S.H. Liang, K.T. Lam, T.H. Fang, K.J. Chen, X.L. Du, Q.K. Xue: ZnO-based MIS photodetectors, Sensors and Actuators A 135, 529–533 (2007).
10. S. J. Young, L. W. Ji, S. J. Chang, and X. L. Du:ZnO Metal-Semiconductor-Metal Ultraviolet Photodiodes with Au Contacts, J.Electrochem. Soc., 154, H26-H29 (2007).
11. H. T. Yuan, Z. Q. Zeng, Z. X. Mei, X. L. Du, J. F. Jia, Q. K. Xue: Surfactant effects of lithium on molecular beam epitaxy of ZnO, J. Phys.: Condensed Matter, 19, 482001 (2007).
12. 王勇,袁洪涛,杜小龙,梅增霞,曾兆权,邹进,贾金锋,薛其坤,张泽: Mg预处理蓝宝石衬底法制备的Zn极性ZnO外延薄膜的结构研究, 电子显微学报, 26, 405-410 (2007).
13. YUAN Hong-Tao, LIU Yu-Zi, DU Xiao-Long, ZENG Zhao-Quan, MEI Zeng-Xia, WANG Yong, JIA Jin-Feng,XUE Qi-Kun, ZHANG Ze: Controlled growth of Zn-polar ZnO films on Al-Terminated alfa-Al2O3(0001) surface by using wurtzite MgO buffer, Chin. Phys. Lett. 24, 2408 (2007).
14. D. Lagarde, L. Lombez, A. Balocchi, P. Renucci, H. Carrère, T. Amand, X. Marie, Z. X. Mei, X. L. Du, and Q. K. Xue: Exciton spin dynamics in ZnO epilayers, Phys. Stat. Sol. (c) 4, 472- 474 (2007).
15. S.J. Young , S.J. Chang, Y. P. Chen, S.H. Liang, L.W. Ji, K.T. Lam, X. L. Du, Q. K. Xue and Y. S. Sun: ZnO metal-semiconductor-metal ultraviolet photodetectors with Iridium contact electrodes, IET Optoelectron. 1, 135 (2007).
16. Yu Zi Liu, Z. Q. Zeng, H.T. Yuan, X. L. Du, X. D. Han, Q. K. Xue, Z Zhang: Inversion domain boundary in ZnO film, Philosophical Magazine Letters, 87, 687-693(2007).
17. Y. Wang, Z. X. Mei, H. T. Yuan, X. L. Du, J. Zou, J. F. Jia, Q. K. Xue and Z. Zhang: Effect of MgO in ZnO films grown on nitrided sapphires, J. Crystal Growth, 305, 74-77 (2007).
18. 徐彭寿 , 武煜宇 , 邹崇文 , 孙柏 , 袁洪涛 , 杜小龙: ZnO(000-1)表面的同步辐射角分辨光电子能谱研究, 中国科学技术大学学报, 37, 560-564 (2007)
19. 王喜娜,梅增霞,王勇,杜小龙,张晓娜,贾金锋,薛其坤,张泽: 硅基高质量氧化锌外延薄膜的界面控制,电子显微学报, 26, 570-575 (2007).

Year 2006 and before
1. S. J. Young, L. W. Ji, R. W. Chuang, S. J. Chang, and X. L. Du:Characterization of ZnO metal-semiconductor-metal ultraviolet photodiodes with palladium contact electrodes , Semicond. Sci. Tech. (2006) 21 (10), 1507-1511.
2. Z. X. Mei, Y. Wang, X. L. Du, Z. Q. Zeng, M. J. Ying, H. Zheng, J. F. Jia, Q. K. Xue and Z. Zhang:Growth of In2O3 single crystalline film on sapphire (0001) substrate by molecular beam epitaxy, J. Crystal Growth (2006) 289, 686-689.
3. Yu-Zi Liu, M.J. Ying, X.L. Du*, J.F. Jia, Q.K. Xue, X.D. Han, Z. Zhang: 30 degree rotation domains in wurtzite ZnO films, J. Crystal Growth (2006) 290,631-636.
4. 王坤,姚淑德,侯利娜,丁志博,袁洪涛,杜小龙,薛其坤: 用卢瑟福背散射/沟道研究ZnO/Zn0.9Mg0.1O/ZnO异质结的弹性应变, 《物理学报》(2006)55, 2892-2896. (1/1)
5. X. L. Du*, Z. X. Mei, Z. Q. Zeng, M. J. Ying, Y. Wang, Y. Z. Liu, Z. T. Zhou, L. W. Guo, J. F. Jia, Q. K. Xue, and Z. Zhang: Polarity-controlled growth of high-quality ZnO epitaxial films, ECS PV 2005(04) ISBN 1-56677-462-4 424
6. M.J. Ying, X. L. Du*, Y. Z. Liu, Z. T. Zhou, Z. Q. Zeng, Z. X. Mei, J. F. Jia, H. Chen, Q. K. Xue and Z. Zhang: Interface engineering for lattice-matched epitaxy of ZnO on (La,Sr)(Al,Ta)O3(111) substrate, Appl. Phys. Lett. (2005) 87, 202107-202109.
7. Y. Wang, X. L. Du*, Z. X. Mei, Z. Q. Zeng, M. J. Ying, H. T. Yuan, J. F. Jia, Q. K. Xue, and Z. Zhang: Cubic nitridation layers on sapphire substrate and their role in polarity selection of ZnO films, Appl. Phys. Lett. (2005) 87,051901-051903.
8. Yu-Zi Liu, M.J. Ying, X.L. Du*, Z.Q. Zeng, Z.X. Mei, J.F. Jia, Q.K. Xue, Z. Zhang: Microstructure and polarity of epitaxial ZnO films grown on LSAT(111) substrate studied by transmission electron microscopy, Phys. Lett. A, (2005) 339, 497-502.
9. Z. X. Mei, X. L. Du*, Y. Wang, Z. Q. Zeng, H. Zheng, J. F. Jia, Q. K. Xue and, Z. Zhang: Controlled growth of Zn-polar ZnO epitaxial film by nitridation of sapphire substrate, Appl. Phys. Lett. (2005) 86,112111-112113. (28/13)
10. Q. Qin, L. W. Guo, Z. T. Zhou, etc.: Electroluminescence of an n-ZnO/p-GaN heterojunction under forward and reverse biases, Chin. Phys. Lett., (2005) 22, 2298-2301.
11. 英敏菊,杜小龙,刘玉资,曾兆权,梅增霞,郑浩,袁洪涛,贾金锋,薛其坤,张泽: LSAT(111)衬底上ZnO单晶薄膜的分子束外延生长,《半导体学报》, (2005) 26(S), 82-86.
12. 曾兆权,杜小龙,刘玉姿,英敏菊,梅增霞,郑浩,袁洪涛,郭丽伟,贾金峰,薛其坤,张泽:n-ZnO/p-GaN异质结界面工程,电子显微学报 (2005)24(4),340
13. 刘玉姿,英敏菊,杜小龙,薛其坤,张泽:纤维锌矿薄膜中30度旋转畴的TEM研究,电子显微学报(2005)24(4),350
14. Q.Y. Xu, Y. Wang, Y. G. Wang, X. L. Du, Q. K. Xue ,and Z. Zhang: Polarity determination of ZnO thin film by electron holography, Appl. Phys. Lett., (2004) 84, 2067-2069.
15. H. P. Sun, X. Q. Pan, X. L. Du, Z. X. Mei, Z. Q. Zeng and Q. K. Xue: Defects in ZnO layers grown on sapphire (0001) surface, Appl. Phys. Lett. (2004) 85, 4385-4387.
16. Z. X. Mei, Y. Wang, X. L. Du*, Z. Q. Zeng, H. Zheng, J. F. Jia, Q. K. Xue and, Z. Zhang: Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate, J. Appl. Phys. (2004) 96, 7108-7111.
17. Y. Wang, X. L. Du*, Q. Y. Xu, Z. X. Mei, Z. Q. Zeng, Q. K. Xue, and Z. Zhang: Defect characteristics of ZnO film grown on (0001) sapphire with an ultra thin gallium wetting layer, J. Crystal Growth, (2004) 273, 100-105.
18. M. J. Ying, X. L. Du*, Z. X. Mei, Z. Q. Zeng, H. Zheng, Y. Wang, J. F. Jia, Z. Zhang and Q. K. Xue: Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films, J. Phys. D (2004) 37, 3058–3062.
19. Y. Wang, Q. Y. Xu, X. L. Du, Z. X. Mei, Z. Q. Zeng, Q. K. Xue, and Z. Zhang: Determination of the polarity of ZnO thin films by electron energy-loss spectroscopy, Phys. Lett. A (2004) 320 322–326.
20. Z.X. Mei, X.L. Du*, Z.Q. Zeng, Y. Guo, J. Wang, J.F. Jia and Q.K. Xue: Two-step Growth of MgO Film on Sapphire (0001) Substrate by Radio Frequency plasma-Assisted Molecular Beam Epitaxy, Chin. Phys. Lett. (2004) 21, 410-413.
21. Z.Q. Zeng, Y. Wang, X.L. Du, Z.X. Mei, X.H. Kong, J.F. Jia, Q.K. Xue and Z. Zhang: Role of gallium wetting layer in high-quality ZnO growth on sapphire (0001) substrates, Science in China G, (2004) 47, 612-620.
22. L.-W. Ji, Y.K. Su, S.J. Chang, C.S. Chang, L.W. Wu, W.C. Lai, X.L. Du, H. Chen: InGaN/GaN multi-quantum dot light-emitting diodes, J. Crystal Growth, (2004) 263, 114-118.
23. 曾兆权,王勇,杜小龙,梅增霞,孔祥和,贾金锋,薛其坤,张泽:蓝宝石(0001) 衬底上Ga浸润层对ZnO外延薄膜质量的影响,中国科学 G辑,(2004)34,290

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