过去的主要工作及获得的成果：

(1) 发展了镁锌氧日盲探测材料的n型掺杂技术，有效解决了其导电性难题，并利用新颖器件结构，成功实现了多种功能的单色、双色及多色紫外探测器；

(2) 实现了氧化亚铜单晶薄膜的制备与本征缺陷种类及浓度的调控，通过氮掺杂技术实现了电性调控，为其在能源器件中的应用打下坚实的材料基础；

(3) 发展了一种同位素示踪实验技术，获得了氧化锌中氧空位及锌空位本征点缺陷的形成能与化学势和费米能级的关系，并进一步发展了氧空位及锌空位浓度的测量方法；

(4) 设计并构建了一种独创的场效应二极管结构，利用场效应对二极管中载流子的调控作用，成功地解决了二极管的柔性和全透明不可兼得的难题，制备了新型的柔性全透明二极管器件，器件性能完全处于国际领先地位。

在Adv. Mater.、Phy. Rev. B、Sci. Rep.、Appl. Phys. Lett.等国际核心期刊上发表SCI 论文70余篇，引用700余次；获授权专利近30项。

代表性文章：
1.Lishu Liu, Zengxia Mei, Aihua Tang, Alexander Azarov, Andrej Kuznetsov, Qikun Xue, and Xiaolong Du: Oxygen vacancies:the origin of n-type conductivity in ZnO. Phys. Rev. B (2016), 93, 235305

2.Alexander Azarov, Vishnukanthan Venkatachalapathy, Zengxia Mei, Lishu Liu, Xiaolong Du, Augustinas Galeckas, Edouard Monakhov, Bengt G. Svensson, and Andrej Kuznetsov: Self-diffusion measurements in isotopic heterostructures of undoped and in situ doped ZnO: Zinc vacancy energetics. Phys. Rev. B (2016), 94, 195208

3.Yonghui Zhang, Zengxia Mei, Shujuan Cui, Huili Liang, Yaoping Liu, and Xiaolong Du: Flexible transparent field-effect diodes fabricated at low-temperature with all oxide materials. Adv. Electron. Mater. (2016)2, 1500486

4.Daqian Ye, Zengxia Mei, Huili Liang, Lishu Liu, Yonghui Zhang, Junqiang Li, Yaoping Liu, Changzhi Gu, Xiaolong Du: A three-terminal ultraviolet photodetector constructed on a barrier-modulated triple-layer architecture. Sci. Rep. (2016) 6, 26169

5.Lishu Liu, Zengxia Mei, Yaonan Hou, Huili Liang, Alexander Azarov, Vishnukanthan Venkatachalapathy, Andrej Kuznetsov, and Xiaolong Du: Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap MgZnO active components. Sci. Rep. (2015) 5, 15516

6.Junqiang Li, Zengxia Mei, Lishu Liu, Huili Liang, Alexander Azarov, Andrej Kuznetsov, Yaoping Liu, Ailing Ji, Qingbo Meng, and Xiaolong Du: Probing Defects in Nitrogen-Doped Cu2O. Sci. Rep. (2014) 4, 7240

7.Y. N. Hou, Z. X. Mei, H. L. Liang, C. Z. Gu, and X. L. Du: Monolithic color-selective ultraviolet (266–315nm) photodetector based on a wurtzite MgxZn1xO film. Appl. Phys. Lett. (2014) 105, 133510

8.Daqian Ye, Zengxia Mei, Huili Liang, Yulong Liu, Alexander Azarov, Andrej Kuznetsov, and Xiaolong Du: Beryllium sites in MBE-grown BeZnO alloyfilms. J. Phys. D: Appl. Phys. (2014) 47, 175102

9.Daqian Ye, Zengxia Mei, Huili Liang, Junqiang Li, Yaonan Hou, Changzhi Gu, Alexander Azarov, Andrej Kuznetsov, Wen-Chiang Hong, Yicheng Lu, and Xiaolong Du: Enhancement-mode ZnO/Mg0.5Zn0.5O HFET on Si. J. Phys. D: Appl. Phys. (2014) 47, 255101

10.Yaonan Hou, Zengxia Mei, and Xiaolong Du: Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1-xO. J. Phys. D: Appl. Phys. (2014) 47, 283001

11.Zhanglong Liu, Xiang He, Zengxia Mei, Huili Liang, Lin Gu, Xiaofeng Duan, and Xiaolong Du: Polarity-manipulation based on nanoscale structural transformation on strain. J. Phys. D: Appl. Phys. (2014) 47, 105303

12.Y. N. Hou, Z. X. Mei, H. L. Liang, D. Q. Ye, C. Z. Gu, and X. L. Du: Dual-band MgZnO ultraviolet pohotodetector integrated with Si. Appl. Phys. Lett. (2013) 102, 153510

13.Junqiang Li, Zengxia Mei, Daqian Ye, Huili Liang,Lisu Liu,Yaoping Liu, A.Yu. Azarov, Andrej Yu Kuznetsov, and Xiaolong Du: Engineering of optically defect free Cu2O enabling exciton luminescence at room temperature. Optical Materials Express (2013) 3, 2072

14.Yaonan Hou, Zengxia Mei, Huili Liang, Daqian Ye, Changzhi Gu, Xiaolong Du, and Yicheng Lu: Annealing Effects of Ti/Au Contact on N-MgZnO/P-Si Ultraviolet-B Photodetectors. IEEE Transactions on Electron Devices (2013) 60, 3474

15.Huili Liang, Zengxia Mei, Yaonan Hou, Shuang Liang, Zhanglong Liu, Yaoping Liu, Junqiang Li, and Xiaolong Du: Realization of W-MgZnO epitaxial growth on BeO-buffered ZnO for UV-B photodetectors. J. Cryst. Growth (2013) 381, 6

16.Y.N. Hou, Z.X. Mei, H.L. Liang, D.Q. Ye, S. Liang, C.Z. Gu, and X.L. Du: Comparative study of n-MgZnO/p-Si ultraviolet-B photodetector performance with different device structures. Appl. Phys. Lett. (2011) 98, 263501

17.H.L. Liang, Z.X. Mei, Q.H. Zhang, L. Gu, S. Liang, Y.N. Hou, D.Q. Ye, C.Z. Gu, R.C. Yu, and X.L. Du: Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors. Appl. Phys. Lett. (2011) 98, 221902

18.Y.N. Hou, Z.X. Mei, Z.L. Liu, T.C. Zhang, and X.L. Du: Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain. Appl. Phys. Lett. (2011) 98, 103506

19.Xiaolong Du, Zengxia Mei, Zhanglong Liu,Yang Guo, Tianchong Zhang, Yaonan Hou, Ze Zhang, Qikun Xue, and Andrej Yu Kuznestov: Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors. Adv. Mater. (2009) 21, 4625

20.T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du: Visible-Blind Ultraviolet Photodetector Based on Double Heterojunction of n-ZnO/insulator-MgO/p-Si. Appl. Phys. Lett. (2009) 94, 113508

21.T. C. Zhang, Z. X. Mei, Y. Guo, Q. K. Xue and X. L. Du: Influence of growth temperature on formation of continuous Ag thin film on ZnO surface by ultra-high vacuum deposition. J. Phys. D: Appl. Phys. (2009) 42, 065303

22.Z. X. Mei, X. L. Du, Y. Wang, M. J. Ying, Z. Q. Zeng, H. T. Yuan, J. F. Jia, and Q. K. Xue: Tri-buffer process: a new approach to obtain high-quality ZnO epitaxial films on sapphire substrates. J. Electron. Mater. (2007) 36, 452

23.Z. X. Mei, X. L. Du, Y. Wang, Z. Q. Zeng, H. Zheng, J. F. Jia, Q. K. Xue, and Z. Zhang: Controlled growth of Zn-polar ZnO epitaxial film by nitridation of sapphire substrate. Appl. Phys. Lett. (2005) 86, 112111

24.Z. X. Mei, Y. Wang, X. L. Du, Z. Q. Zeng, H. Zheng, J. F. Jia, Q. K. Xue, and Z. Zhang: Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate. J. Appl. Phys. (2004) 96, 7108

代表性专利：
1.张永晖、梅增霞、梁会力、杜小龙，“场效应二极管”，实用新型专利号：ZL201620054295.5，授权公告日：2016-05-05。
2.张永晖、梅增霞、刘利书、梁会力、刘尧平、杜小龙，“薄膜晶体管”，实用新型专利号: ZL2014207623352，授权公告日：2015年2月4日。
3.梅增霞、梁会力、梁爽、叶大千、刘章龙、崔秀芝、刘尧平、杜小龙，“在Si衬底上制备纤锌矿相MxZn1-xO单晶薄膜的方法”，专利号：ZL201110119774.2，授权公告日：2015年6月1日。
4.张永晖、梅增霞、梁会力、刘尧平、杜小龙，“薄膜晶体管驱动电路”，实用新型专利号：ZL201520717477.1，授权公告日：2015年11月30日。
5.刘利书、梅增霞、侯尧楠、刘章龙、梁会力、刘尧平、杜小龙，“光电子器件”，实用新型专利号：ZL2014200169585，授权公告日：2014年7月8日。
6.梅增霞、叶大千、刘利书、梁会力、刘尧平、杜小龙，“新型薄膜晶体管及光电子器件和微电子器件”，专利申请号：201410349844.7，申请日期：2014年7月22日。
7.梅增霞、侯尧楠、梁会力、叶大千、刘尧平、杜小龙，“深紫外探测器及其制备方法”，专利号：ZL201310244835.7，授权公告日：2013年11月13日。
8.梅增霞、梁会力、梁爽、刘章龙、李俊强、侯尧楠、刘尧平、崔秀芝、张生利、杜小龙，“一种在蓝宝石衬底上制备高质量ZnO单晶薄膜的方法”，专利号：ZL201010147510.3，授权公告日：2012年1月18日。
9.梁爽、梅增霞、梁会力、崔秀芝、杜小龙：一种基于PIN异质结构的碳化硅基紫外探测材料的制备方法，专利号：ZL201010219623. X，专利授权日：2011年7月27日。
10.刘章龙、杜小龙、梅增霞、张天冲、郭阳：一种制备MgZnO单晶薄膜的方法，专利号：ZL200810224529.6，授权公告日：2011年8月31日。