报告人简介：

Prof. Brillson is a Fellow of the Institute of Electrical and Electronics Engineers, a Fellow of the American Academy for the Advancement of Science, a Fellow of the AVS, a Fellow of the American Physical Society, and a former Governing Board member of the American Institute of Physics. He has presented over 100 invited lectures at national or international scientific conferences. He has served on theboard of editors for numerous technical journals, and has more than 300 professional publications including technical articles, invited reviews,monographs and books as well as over 6,000 citations to his work (h-index = 39), including the ISI Citation Classic, The Structure and Properties of Metal-Semiconductor Interfaces.

Abstract：
Among the key roadblocks to ZnO optoelectronics have been the difficulty of p-type doping and the role of compensating native defects. The physical nature of the donors and acceptors dominating carrier densities in ZnO and their effect of carrier injection at contacts is unresolved. Besides, the impact of these electronic states on optoelectronics at the nano-scale is only now being explored. We are able to address these issues using a combination of depth-resolved and scanned probe techniques. Taking these depth-resolved and scanning techniques together, we clearly identify the optical transitions and energies of Zn vacancies (VZn) and VZnclusters, the effects of different annealing methods on their spatial distributions in ion-implanted ZnO, and the contribution of VZn, VZn clusters, and Oxygen vacancies (VO) complexes to near- and sub-surface carrier density. We have now discovered that nano-structures form spontaneously on ZnO polar surfaces and create sub-surface VZn locally with Zn diffusion that feeds the nanostructure growth.